n-channel fredfet absolute maximum ratings thermal and mechanical characteristics g d s single die fredfet unit a v mj a unit w c/w c v oz g inlbf nm ratings 57 36 325 30 3725 43 min typ max 960 0.13 0.15 -55 150 2500 1.03 29.2 10 1.1 parameter continuous drain current @ t c = 25c continuous drain current @ t c = 100c pulsed drain current 1 gate-source voltage single pulse avalanche energy 2 avalanche current, repetitive or non-repetitive characteristic total power dissipation @ t c = 25c junction to case thermal resistance case to sink thermal resistance, flat, greased surface operating and storage junction temperature range rms voltage (50-60hhz sinusoidal waveform from terminals to mounting base for 1 min.) package weight terminals and mounting screws. symbol i d i dm v gs e as i ar symbol p d r jc r cs t j ,t stg v isolation w t torque typical applications zvs phase shifted and other full bridge half bridge pfc and other boost converter buck converter single and two switch forward flyback features fast switching with low emi low t rr for high reliability ultra low c rss for improved noise immunity low gate charge avalanche energy rated rohs compliant s o t -2 2 7 is oto p ? file # e145592 "ul recognized" g s s d APT53F80J 800v, 57a, 0.11 max, t rr 470ns APT53F80J power mos 8 ? is a high speed, high voltage n-channel switch-mode power mosfet. this 'fredfet' version has a drain-source (body) diode that has been optimized for high reliability in zvs phase shifted bridge and other circuits through reduced t rr , soft recovery, and high recovery dv/dt capability. low gate charge, high gain, and a greatly reduced ratio of c rss /c iss result in excellent noise immunity and low switching loss. the intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low emi and reliable paralleling, even when switching at very high frequency. microsemi website - http://www.microsemi.com 050-8157 rev d 9-2011 downloaded from: http:///
static characteristics t j = 25c unless otherwise speci ? ed dynamic characteristics t j = 25c unless otherwise speci ? ed source-drain diode characteristics 1 repetitive rating: pulse width and case temperature limited by maximum junction temperature. 2 starting at t j = 25c, l = 4.03mh, r g = 25 , i as = 43a. 3 pulse test: pulse width < 380 s, duty cycle < 2%. 4 c o(cr) is de ? ned as a ? xed capacitance with the same stored charge as c oss with v ds = 67% of v (br)dss . 5 c o(er) is de ? ned as a ? xed capacitance with the same stored energy as c oss with v ds = 67% of v (br)dss . to calculate c o(er) for any value of v ds less than v (br)dss, use this equation: c o(er) = 5.57e-8/v ds ^2 + 7.15e-8/v ds + 2.75e-10. 6 r g is external gate resistance, not including internal gate resistance or gate driver impedance. (mic4452) microsemi reserves the right to change, without notice, the speci ? cations and information contained herein. g d s unit v v/c v mv/c a na unit s pf nc ns unit a v ns c a v/ns min typ max 800 0.87 0.07 0.11 2.5 4 5 -10 250 1000 100 min typ max 57 325 1.0 405 470 800 960 2.95 8.86 14 21 20 min typ max 80 17550 300 1745 825 410 570 95 290 100 145 435 125 test conditions v gs = 0v , i d = 250 a reference to 25c, i d = 250 a v gs = 10v , i d = 43a v gs = v ds , i d = 5ma v ds = 800v t j = 25c v gs = 0v t j = 125c v gs = 30v test conditions mosfet symbol showing the integral reverse p-n junction diode (body diode) i sd = 43a , t j = 25c, v gs = 0v t j = 25c t j = 125c i sd = 43a 3 t j = 25c di sd / dt = 100a/ s t j = 125c v dd = 100v t j = 25c t j = 125c i sd 43a, di/dt 1000a/ s, v dd = 400v, t j = 125c test conditions v ds = 50v , i d = 43a v gs = 0v , v ds = 25v f = 1mhz v gs = 0v , v ds = 0v to 533v v gs = 0 to 10v , i d = 43a, v ds = 400v resistive switching v dd = 533v , i d = 43a r g = 2.2 6 , v gg = 15v parameter drain-source breakdown voltage breakdown voltage temperature coef ? cient drain-source on resistance 3 gate-source threshold voltage threshold voltage temperature coef ? cient zero gate voltage drain current gate-source leakage current parametercontinuous source current (body diode) pulsed source current (body diode) 1 diode forward voltage reverse recovery time reverse recovery charge reverse recovery current peak recovery dv/dt parameter forward transconductance input capacitance reverse transfer capacitance output capacitance effective output capacitance, charge related effective output capacitance, energy related total gate charge gate-source charge gate-drain charge turn-on delay time current rise time turn-off delay time current fall time symbol v br(dss) ? v br(dss) / ? t j r ds(on) v gs(th) ? v gs(th) / ? t j i dss i gss symbol i s i sm v sd t rr q rr i rrm dv/dt symbol g fs c iss c rss c oss c o(cr) 4 c o(er) 5 q g q gs q gd t d(on) t r t d(off) t f 050-8157 rev d 9-2011 APT53F80J downloaded from: http:///
v gs = 6v, 6.5v, 10 & 15v 4v v gs = 10v 4.5v 5v t j = 125c t j = 25c t j = -55c t j = 125c t j = 150c t j = 125c t j = 25c t j = -55c v ds > i d(on) x r ds(on) max. 250 sec. pulse test @ <0.5 % duty cycle normalized to v gs = 10v @ 43a c oss c iss i d = 43a v ds = 640v v ds = 160v v ds = 400v t j = 150c t j = 25c c rss t j = 125c t j = 25c t j = -55c 5.5v v gs , gate-to-source voltage (v) g fs , transconductance r ds(on) , drain-to-source on resistance i d , drain current (a) i sd, reverse drain current (a) c, capacitance (pf) i d , drain current (a) i d , drian current (a) v ds(on) , drain-to-source voltage (v) v ds , drain-to-source voltage (v) figure 1, output characteristics figure 2, output characteristics t j , junction temperature (c) v gs , gate-to-source voltage (v) figure 3, r ds(on) vs junction temperature figure 4, transfer characteristics i d , drain current (a) v ds , drain-to-source voltage (v) figure 5, gain vs drain current figure 6, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (v) figure 7, gate charge vs gate-to-source voltage figure 8, reverse drain current vs source-to-drain voltage 0 5 10 15 20 25 30 0 5 10 15 20 25 30 -55 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 0 10 20 30 40 50 60 70 0 200 400 600 800 0 100 200 300 400 500 600 700 800 0 0.3 0.6 0.9 1.2 1.5 200180 160 140 120 100 8060 40 20 0 3.02.5 2.0 1.5 1.0 0.5 0 100 9080 70 60 50 40 30 20 10 0 1614 12 10 86 4 2 0 100 8060 40 20 0 350300 250 200 150 100 50 0 30,00010,000 1,000 100 10 350300 250 200 150 100 50 0 APT53F80J 050-8157 rev d 9-2011 downloaded from: http:///
sot-227 (isotop ? ) package outline 1ms 100ms r ds(on) 0.5 single pulse 0.1 0.3 0.7 0.05 d = 0.9 scaling for different case & junction temperatures: i d = i d(t c = 25 c) *( t j - t c )/125 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: t 1 = pulse duration dc line 100 s i dm 10ms 13 s 100 s i dm 100ms 10ms 13 s r ds(on) dc line t j = 150c t c = 25c 1ms t j = 125c t c = 75c i d , drain current (a) v ds , drain-to-source voltage (v) v ds , drain-to-source voltage (v) figure 9, forward safe operating area figure 10, maximum forward safe operating area z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 11. maximum effective transient thermal impedance junction-to-case vs pulse duration i d , drain current (a) 31.5 (1.240)31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307)8.2 (.322) 30.1 (1.185)30.3 (1.193) 38.0 (1.496)38.2 (1.504) 14.9 (.587)15.1 (.594) 11.8 (.463)12.2 (.480) 8.9 (.350)9.6 (.378) hex nut m 4 (4 places ) 0.75 (.030)0.85 (.033) 12.6 (.496)12.8 (.504) 25.2 (0.992)25.4 (1.000) 1.95 (.077)2.14 (.084) * source drai n gate * r = 4.0 (.157) (2 places) 4.0 (.157)4.2 (.165) (2 places) w=4.1 (.161)w=4.3 (.169) h=4.8 (.187)h=4.9 (.193) (4 places) 3.3 (.129)3.6 (.143) * source emitter terminals are shorte d internally. current handlin g capability is equal for eithersource terminal . 1 10 100 1000 1 10 100 1000 400100 10 1 0.1 400100 10 1 0.1 0.140.12 0.10 0.08 0.06 0.04 0.02 0 APT53F80J 050-8157 rev d 9-2011 downloaded from: http:///
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